Scientists from the Department of Materials Science and Engineering at Pennsylvania State University and the University of Minnesota have published a technical paper and created a working thermoelectric device that demonstrated a 210% enhancement in cooling power density compared to a leading commercial devices made of bismuth telluride (Bi2Te3). At the same time, it seemed to maintain a coefficient of performance (COP) that was on par with a commercial device. COP is the ratio of useful cooling to energy required for an application.^1,2

At the core of this new technology is a new process using half-Heusler (hH) alloys. According to the authors, "this study utilized Sb-pressure controlled annealing process to modulate the microstructure and point defects of Nb0.55Ta0.40Ti0.05FeSb compound, resulting in a 100% increase in carrier mobility and a maximum power factor of 78 μW cm−1 K−2, approaching the theoretical prediction for NbFeSb single crystal."

This means the process enabled more efficient electron movement in the material, leading to higher cooling density and efficiency for greater thermal conductivity.

This technology is so new, there does not appear to be a video demo of it yet. We have provided an excellent video on the basics of thermoelectric technology in its place.

Sources:

1. https://www.nature.com/articles/s41467-023-38446-0

2. https://techxplore.com/news/2023-07-high-power-thermoelectric-device-cooling-next-gen.html#:~:text=A%20new%20thermoelectric%20cooler%20developed%20by%20Penn%20State,heat%20in%20future%20high-power%20electronics%2C%20the%20researchers%20said.